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ORCIDJincheng Zhang 0001
Person information
- affiliation: Xidian University, School of Microelectronics, Xi'an, China
- affiliation: Xidian Guangzhou Research Institute, Guangzhou, China
Other persons with the same name
- Jincheng Zhang (aka: Jin-cheng Zhang, Jin-Cheng Zhang) — disambiguation page
- Jincheng Zhang 0002 — Fudan University, School of Microelectronics, Shanghai, China
- Jin-Cheng Zhang 0003
![[0000-0002-5005-6972]](https://dblp.org/img/orcid-mark.12x12.png "0000-0002-5005-6972")
(aka: Jincheng Zhang 0003) — University of Technology Malaysia (UTM), Big Data Centre, Skudai, Malaysia - Jincheng Zhang 0004 — University of Warwick, School of Engineering, Coventry, UK
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2020 – today
- 2026
[j25]Jincheng Zhang, Shudong Huo, Zhengxing Zhang, Mengjiao Xiang, Menghan Zheng, Shen Liu, Yachao Zhang, Xiufeng Song, Hong Zhou, Kui Dang, Jing Ning, Yue Hao:
First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs. Sci. China Inf. Sci. 69(1) (2026)- [j24]Yan-Ning Zhang, Haidi Wu, Haoran Zhang, Shiyu Li, Xinchen Ji, Zhichun Yang, Xinbo Zhang, Ling Bai, Juncheng Zheng, Dong Wang, Yue Hao, Jing Ning, Jincheng Zhang:
Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy. Sci. China Inf. Sci. 69(2) (2026) - [j23]Yitao Feng, Hong Zhou, Hao Fang, Xiaorong Zhang, Yanbo Chen, Guotao Tian, Yue Hao, Jincheng Zhang:
2.5 kV/674 MW/cm2 or 100 A/2 kV β-Ga2O3 heterojunction diodes with large surge current and small recovery time. Sci. China Inf. Sci. 69(3) (2026) - 2025
- [j22]Yitao Feng, Hong Zhou, Sami Alghamdi, Hao Fang, Xiaorong Zhang, Yanbo Chen, Guotao Tian, Saud Wasly, Yue Hao, Jincheng Zhang:
1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations. Sci. China Inf. Sci. 68(2) (2025) - [j21]Longyang Yu, Sheng-Lei Zhao, Xuejing Sun, Wei Mu, Xiufeng Song, Shuzhen You, Yue Hao, Jincheng Zhang:
Symmetrical GaN-Based Vertical Module With Low Interference Integration and High Thermal Performance for PoL Converters. IEEE Trans. Ind. Electron. 72(12): 13164-13175 (2025) - 2024
- [j20]Wei Zhu, Yi-Xing He, Hao-Nan Li, Xian-Qin Liu, Siwen Zhang, Lei Wang, Jiang Zhu, Yue-Qi Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma:
Cascade and Extensible In-Memory Arithmetic Computing in 2T1R ReRAM Arrays Using Time-Sum-Logic Design. IEEE Access 12: 104081-104090 (2024) - [j19]Kui Dang, Zhilin Qiu, Shudong Huo, Peng Zhan, Huining Liu, Yachao Zhang, Jing Ning, Hong Zhou, Jincheng Zhang:
Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability. Sci. China Inf. Sci. 67(2) (2024) - [j18]Hanghai Du, Lu Hao, Zhihong Liu, Zeyu Song, Yachao Zhang, Kui Dang, Jin Zhou, Jing Ning, Zan Li, Jincheng Zhang, Yue Hao:
High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz. Sci. China Inf. Sci. 67(6) (2024) - [j17]Hao Qiu, Zhihao Yu, Tiange Zhao, Qi Zhang, Mingsheng Xu, Peifeng Li, Taotao Li, Wenzhong Bao, Yang Chai, Shula Chen, Yiqi Chen, Hui-Ming Cheng, Daoxin Dai, Zengfeng Di, Zhuo Dong, Xidong Duan, Yuhan Feng, Yu Fu, Jingshu Guo, Pengwen Guo, Yue Hao, Jun He, Xiao He, Jingyi Hu, Weida Hu, Zehua Hu, Xinyue Huang, Ziyang Huang, Ali Imran, Ziqiang Kong, Jia Li, Qian Li, Weisheng Li, Lei Liao, Bilu Liu, Can Liu, Chunsen Liu, Guanyu Liu, Kaihui Liu, Liwei Liu, Sheng Liu, Yuan Liu, Donglin Lu, Likuan Ma, Feng Miao, Zhenhua Ni, Jing Ning, Anlian Pan, Tian-Ling Ren, Haowen Shu, Litao Sun, Yue Sun, Quanyang Tao, Ziao Tian, Dong Wang, Hao Wang, Haomin Wang, Jialong Wang, Junyong Wang, Wenhui Wang, Xingjun Wang, Yeliang Wang, Yuwei Wang, Zhenyu Wang, Yao Wen, Haidi Wu, Hongzhao Wu, Jiangbin Wu, Yanqing Wu, Longfei Xia, Baixu Xiang, Luwen Xing, Qihua Xiong, Xiong Xiong, Jeffrey Xu, Tao Xu, Yang Xu, Liu Yang, Yi Yang, Yuekun Yang, Lei Ye, Yu Ye, Bin Yu, Ting Yu, Hui Zeng, Guangyu Zhang, Hongyun Zhang, Jincheng Zhang, Kai Zhang, Tao Zhang, Xinbo Zhang, Yanfeng Zhang, Chunsong Zhao, Yuda Zhao, Ting Zheng, Peng Zhou, Shaohua Kevin Zhou, Yuxuan Zhu, Deren Yang, Yi Shi, Han Wang, Xinran Wang:
Two-dimensional materials for future information technology: status and prospects. Sci. China Inf. Sci. 67(6) (2024) - [j16]Xiongjie Zhang, Xinman Li, Anyang Zhao, Yang Jiang, Weihang Zhang, Jincheng Zhang, Rui Paulo Martins, Pui-In Mak:
A 12V-to-1V Outphase-Interleaved SC Hybrid Converter With Enhanced Inductor De-Energizing Slew Rate and Adaptive Deadtime Control. IEEE Trans. Circuits Syst. II Express Briefs 71(5): 2579-2583 (2024) - [c5]Min Zhou, Hong Zhou, Jincheng Zhang, Yue Hao:
$\beta$-Ga2O3-on-SiC RF MOSFETs $\beta$. TENCON 2024: 454-455 - [c4]Min Zhou, Hong Zhou, Mengwei Si, Guangjie Gao, Xiaojin Chen, Xiaoxiao Zhu, Kui Dang, Peijun Ma, Xiaohua Ma, Xuefeng Zheng, Zhihong Liu, Jincheng Zhang, Yuhao Zhang, Yue Hao:
71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure. VLSI Technology and Circuits 2024: 1-2 - 2023
- [j15]Sheng-Lei Zhao, Jincheng Zhang, Yachao Zhang, Lansheng Feng, Shuang Liu, Xiufeng Song, Yixin Yao, Jun Luo, Zhihong Liu, Shengrui Xu, Yue Hao:
1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. Sci. China Inf. Sci. 66(2) (2023) - [j14]Ren Huang, Weihang Zhang, Jincheng Zhang, Chunxu Su, Xi Liu, Liyu Fu, Yue Hao:
2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity. Sci. China Inf. Sci. 66(6) (2023) - [c3]Pengfei Dong, Chenlu Wang, Qinglong Yan, Yingming Wang, Jian Wang, Sami Alghamdi, Zhihong Liu, Jincheng Zhang, Hong Zhou, Yue Hao:
Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage. DRC 2023: 1-2 - 2022
- [j13]Xin Gan, Yueying Zhang, Yupeng Hui, Shaoxuan Liu, Lei Wang, Jincheng Zhang, Yue Hao, Haijiao Harsan Ma:
Controlling Memristance and Negative Differential Resistance in Point-Contacted Metal-Oxides-Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping. Adv. Intell. Syst. 4(6) (2022) - [j12]Haiyong Wang, Wei Mao, Shenglei Zhao, Yuanhao He, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao:
Unidirectional p-GaN gate HEMT with composite source-drain field plates. Sci. China Inf. Sci. 65(2) (2022) - [j11]Dujun Zhao, Zhaoxi Wu, Chao Duan, Bo Mei, Zhongyang Li, Zhongxu Wang, Qing Tang, Qing Yang, Yinhe Wu, Weihang Zhang, Zhihong Liu, Shenglei Zhao, Jincheng Zhang, Yue Hao:
Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. Sci. China Inf. Sci. 65(2) (2022) - [j10]Yinhe Wu, Jincheng Zhang, Shenglei Zhao, Zhaoxi Wu, Zhongxu Wang, Bo Mei, Chao Duan, Dujun Zhao, Weihang Zhang, Zhihong Liu, Yue Hao:
Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs. Sci. China Inf. Sci. 65(8): 1-7 (2022) - 2021
- [j9]Yue Hao, Shuiying Xiang, Genquan Han, Jincheng Zhang, Xiaohua Ma, Zhangming Zhu, Xingxing Guo, Yahui Zhang, Yanan Han, Ziwei Song, Yan Liu, Ling Yang, Hong Zhou, Jiangyi Shi, Wei Zhang, Min Xu, Weisheng Zhao, Biao Pan, Yangqi Huang, Qi Liu, Yimao Cai, Jian Zhu, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao, Zhiyong Zhang, Guoping Guo, Yonghua Chen, Yong Liu, Xiangfei Chen, Chunlai Xue, Xingjun Wang, Lixia Zhao, Xihua Zou, Lianshan Yan, Ming Li:
Recent progress of integrated circuits and optoelectronic chips. Sci. China Inf. Sci. 64(10) (2021) - [c2]Yanshuang Ba, Sunjie HuangFu, Miaomiao Li, Junxiao Ma, Weidong Zhu, Dazheng Chen, He Xi, Jincheng Zhang, Chunfu Zhang, Yue Hao:
All-Inorganic Two-Dimensional Ruddlesden-Popper Perovskite Cs2PbI2Cl2 Nanosheet Films for Self-Powered, Visible-Blind UV Photodetectors. ASICON 2021: 1-4 - 2020
- [j8]Kai Su, Zeyang Ren, Yue Peng, Jinfeng Zhang, Jincheng Zhang, Yachao Zhang, Qi He, Chunfu Zhang, Yue Hao:
Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics. IEEE Access 8: 20043-20050 (2020) - [j7]Zeyang Ren, Qi He, Jiamin Xu, Guansheng Yuan, Jinfeng Zhang, Jincheng Zhang, Kai Su, Yue Hao:
Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3 Gate Dielectric. IEEE Access 8: 50465-50471 (2020) - [j6]Shuang Liu, Xiufeng Song, Jincheng Zhang, Sheng-Lei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Zhou, Zhihong Liu, Yue Hao:
Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs. IEEE Access 8: 57126-57135 (2020) - [j5]Kui Dang, Jincheng Zhang, Hong Zhou, Shan Yin, Tao Zhang, Jing Ning, Yachao Zhang, Zhaoke Bian, Jiabo Chen, Xiaoling Duan, Sheng-Lei Zhao, Yue Hao:
Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration. IEEE Trans. Ind. Electron. 67(8): 6597-6606 (2020) - [c1]Yingzhe Wang, Xuefeng Zheng, Jiaduo Zhu, Shengrui Xu, Xiaohua Ma, Jincheng Zhang, Yue Hao, Linlin Xu, Jiangnan Dai, Peixian Li:
Evolution of Defect in AlGaN-based Deep Ultraviolet Light Emitting Diodes During Electrical Stress. IRPS 2020: 1-4
2010 – 2019
- 2015
- [j4]Xiangdong Li, Weihang Zhang, Mengdi Fu, Jincheng Zhang, Haiqing Jiang, Zhenxing Guo, Yu Zou, Renyuan Jiang, Zuo-Chen Shi, Yue Hao:
AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance. IEICE Electron. Express 12(20): 20150694 (2015) - 2014
- [j3]Wei-Wei Chen, Xiaohua Ma, Bin Hou, Sheng-Lei Zhao, Jiejie Zhu, Jincheng Zhang, Yue Hao:
Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress. Microelectron. Reliab. 54(6-7): 1293-1298 (2014) - 2010
- [j2]Jincheng Zhang, Zhiming Li, Yue Hao, Hao Wang, Peixian Li:
Finite element analysis and optimization of temperature field in GaN-MOCVD reactor. Sci. China Inf. Sci. 53(10): 2138-2143 (2010)
2000 – 2009
- 2008
- [j1]Jinfeng Zhang, Yue Hao, Jincheng Zhang, JinYu Ni:
The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content. Sci. China Ser. F Inf. Sci. 51(6): 780-789 (2008)
Coauthor Index
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