Nanoelectronics Lab

Honored for laying the key theoretical foundation for nanoscale transistors, highlighted at the July 25 ceremony in Taiwan

For the paper entitled “Edge Continual Training and Inference with RRAM-Gain Cell Memory Integrated on Si CMOS”

Researchers at Stanford Engineering have developed an ultrathin material that conducts electricity better than copper and could enable more energy-efficient nanoelectronics

Stanford’s membership in a new national consortium will aid researchers in developing the next generation of chips essential for electronics

TSMC’s former R&D chief wants designers to combine different memory technologies

Powering a more sustainable future